NTE327 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Power Amp, Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
V_CE = 2V, I_C = 0.5A
V_CE = 2V, I_C = 10A
V_CE = 2V, I_C = 25A
I_C = 10A, I_B = 1.0A
I_C = 25A, I_B = 2.5A
I_C = 10A, I_B = 1.0A
I_C = 25A, I_B = 2.5A
I_C = 10A, V_CE = 2V
50 – –
30 – 120
12 – –
– – 1.0 V
– – 1.8 V
– – 1.8 V
– – 2.5 V
– – 1.8 V
Current Gain–Bandwidth Product
f_T
V_CE = 10V, I_C = 1A, f = 10MHz,
Note 2
40 – – MHz
Output Capacitance
Switching Characteristics
C_ob V_CB = 10V, I_E = 0, f = 0.1MHz
– – 300 pF
Rise Time
Storage Time
Fall Time
t_r
V_CC = 80V, I_C = 10A, I_B1 = 1A,
V_BE(off) = 6V
– – 0.3 µ
t_s
V_CC = 80V, I_C = 10A, I_B1 = I_B2 =1A –
– 1.0 µs
t_f
– – 0.25 µs
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f_T = |h_fe| • f_test.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case