NTE3222 Datasheet, PDF (2/2 Pages) NTE Electronics – Optoisolator NPN Transistor Output

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Diode
Forward Voltage
Reverse Current
Terminal capacitance
Transistor
V_F I_F = 10mA
I_R V_R = 5V
C_t V = 0V, f = 1MHz
– 1.17 1.40 V
– – 5 µA
– 50 – pF
Collector–Emitter Dark Current
Coupled
I_CEO V_CE = 80V, I_F = 0mA
– – 100 nA
Current Transfer Ratio (I_C/I_F)
Collector Saturation Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
CTR I_F = 5mA, V_CE = 5V
80 300 600 %
V_CE(sat) I_F = 10mA, I_C = 2mA
– – 0.3 V
R_I–O V_I–O = 1kV_DC
10¹¹ –
–
Ω
C_I–O V = 0V, f = 1MHz
– 0.5 – pF
t_r V_CC = 10V, I_C = 2mA, R_L = 100Ω –
3
– µs
t_f
– 5 – µs
Pin Connection Diagram
Anode ¹
Cathode 2
4 _Collector
3 Emitter
4
3
1
2
.252
(6.4)
.100 (2.54)
.180 (4.58)
.176
(4.47)
.099 (2.5)
Min
.309
(7.85)