NTE3102 Datasheet, PDF (2/2 Pages) NTE Electronics – Photon Coupled Interrupter Module NPN Transistor

Electrical Characteristics (Cont’d): (T_A = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Detector
Collector–Emitter Breakdown Voltage
Emitter–Collector Breakdown Voltage
V_(BR)CEO I_C = 1mA
V_(BR)ECO I_E = 100µA
55 –
–
V
6
–
–
V
Collector Dark Current
I_CEO V_CE = 45V
–
– 100 nA
Capacitance
C_ce V_CE = 5V, f = 1MHz
– 3.3 5.0 pF
Coupled
Photodiode Current
I_CE(on)
V_CE = 5V, I_F = 5mA
V_CE = 5V, I_F = 20mA
0.15 –
1.0 –
– mA
– mA
V_CE = 5V, I_F = 30mA
1.9 –
– mA
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 1.8mA, I_F = 30mA
–
– 0.4 V
Turn–On Time
t_on V_CC = 5V, I_F = 30mA, R_L = 2.5kΩ –
8
– µs
Turn–Off Time
t_off
– 50 – µs
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
.433 (11.0)
Max
.124 (3.15
+
D
D – Detector
E
+
E – Emitter
.246 (6.25)
.136 (3.54) Min
Sensing Area
.303 (7.69)
Min
.315 (8.0) Min
.295 (7.49) Max
Seating
Plane
.110 (2.79) Max