NTE3083 Datasheet, PDF (2/2 Pages) NTE Electronics – Optoisolator NPN Darlington Transistor Output

Electro–Optical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Emitter (GaAs LED)
Forward Voltage
V_F
Reverse Voltage
V_R
Junction Capacitance
C_J
Detector (Silicon Photo–Darlington)
I_F = 20mA
I_R = 10µA
V_R = 0V
– 1.15 1.50 V
3.0 25.0 – V
– 50 – pF
Collector Breakdown Voltage
Base Breakdown Voltage
Emitter Breakdown Voltage
Collector Leakage Current
Saturation Voltage
Base Photo–Current
Darlington Gain
Collector–Emitter Capacitance
Switching Times, Coupled
V_(BR)CEO I_C = 1mA
V_(BR)CBO I_C = 10µA
V_(BR)EBO I_E = 10µA
I_CEO V_CE = 10V
V_CE(sat) I_C = 2mA, I_F = 1mA
I_C = 10mA, I_F = 5mA
I_C = 50mA, I_F = 10mA
I_B V_CB = 5V, I_F = 10mA
h_FE I_B = 1µA, V_CE = 1V
C_CE V_CE = 10V
30 60 – V
30 60 – V
68–V
– 1 100 nA
– 0.8 1.0 V
– 0.8 1.0 V
– 0.9 1.2 V
– 2 – µA
– 50k –
– 6 – pF
Rise Time, Fall Time
TTL Gate Turn–On Time
TTL Gate Turn–Off Time
DC Collector Current Transfer
Ratio
t_r, t_f V_CC = 10V, I_C = 10mA, R_L = 100Ω – 80 – µs
t_ON I_F = 1mA
– 200 – µs
t_OFF I_F = 1mA
– 400 – µs
CTR I_F = 10mA, V_CE = 5V
200 400 – %
Anode 1
Cathode 2
N.C. 3
654
1 23
6 Base
5 Collector
4 Emitter
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.260
(6.6)
Max
.350
(8.89)
Max
.300 (7.62)
.085 (2.16) Max
.100 (2.54)