NTE3082 Datasheet, PDF (2/2 Pages) NTE Electronics – Optoisolator NPN Darlington Transistor Output

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Infrared Emitting Diode
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Capacitance
Phototransistor
V_(BR)R
V_F
I_R
C_i
I_R = 10µA
I_F = 60mA
V_R = 3V
V = 0, f = 1MHz
4 – –V
– – 1.7 V
– – 1.0 µA
– 30 – pF
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 1mA, I_F = 0
Emitter–Collector Breakdown Voltage V_(BR)ECO I_E = 100µA, I_F = 0
Collector Dark Current
I_CEO V_CE = 10V, I_F = 0
Capacitance
C_ce V_CE = 5V, f = 1MHz
Coupled Characteristics
30 – – V
7 – –V
– 5 100 nA
– 5 – pF
DC Current Transfer Ratio
CTR I_F = 5mA, V_CE = 1.5V
400 – – %
Collector–Emitter Saturation Voltage V_CE(sat) I_F = 5mA, I_C = 2mA
– 0.8 1.0 V
Isolation Resistance
R_IO Input to Output Voltage = 500V_DC, 100 –
Note 1
– GΩ
Input to Output Capacitance
C_io Input to Output Voltage = 0,
f = 1MHz, Note 1
– 0.5 – pF
Turn–On Time
Turn–Off Time
t_on V_CE = 10V, I_C = 10mA, R_L = 100Ω – 105 – µs
V_CE = 5V, I_F = 10mA, R_L = 1kΩ
– 10 – µs
t_off V_CE = 10V, I_C = 10mA, R_L = 100Ω – 60 – µs
V_CE = 5V, I_F = 10mA, R_L = 1kΩ
– 700 – µs
Note 1. Measured with input diode leads shorted together, and output detector leads shorted together.
+
D
E
+
Anode 1
Cathode 2
4 Emitter
3 Collector
.375 (9.52)
Max
.250 (6.35)
Max
.350
(8.89)
Max
.020 (.508)
Square Typ
.300
(7.62)
Min
.025 (.635)
.025
(.635)
Seating Plane
.300 (7.62)
.100 (2.54)