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NTE3042 Datasheet, PDF (2/2 Pages) NTE Electronics – Optoisolator NPN Transistor Output
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Collector Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Dark Current
Collector–Base Dark Current
Collector–Emitter Capacitance
DC Current Gain
Coupled Characteristics
V(BR)CEO IC = 1mA
V(BR)ECO IE = 100µA
V(BR)CBO IC = 100µA
ICEO VCE = 10V, IB = 0
ICBO VCB = 10V, IE = 0
CCE VCE = 0
hFE VCE = 5V, IC = 100µA
30 –
–
V
7
–
–
V
70 –
–
V
–
– 50 nA
–
– 20 nA
– 10 – pF
100 150 –
DC Current Transfer Ratio
Input–to–Output Isolation Resistance
IC/IF IF = 10mA, VCE = 10V, IB = 0
RIO VIO = 500V, Note 1
20 –
–%
1011 –
–
Ω
Collector–Emitter Saturation Voltage VCE(sat) IF = 16mA, IC = 2mA
–
– 0.4 V
Input–to–Output Capacitance
CIO f = 1MHz, Note 1
– 0.6 – pF
Output Rise Time
tr
VCC = 10V, IC = 2mA, RL = 100Ω
– 2.0 –
µs
Output Fall Time
tf
– 2.0 – µs
Input–to–Output Isolation Voltage
VISO Note 1
1500 –
–
V
Note 1. Measured with input leads shorted together and output leads shorted together.
Pin Connection Diagram
Anode 1
Cathode 2
N.C. 3
6 Base
5 Collector
4 Emitter
6 54
1 23
.260
(6.6)
Max
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.350
(8.89)
Max
.300
(7.62)
.085 (2.16) Max
.100 (2.54)