NTE3040 Datasheet, PDF (2/2 Pages) NTE Electronics – Optoisolator NPN Transistor Output

Electrical Characteristics (Cont’d): (T_A = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Phototransistor
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Collector Breakdown Voltage
Collector Dark Current
Capacitance
Coupled Characteristics
V_(BR)CEO I_C = 10mA, I_F = 0
V_(BR)CBO I_C = 100µA, I_F = 0
V_(BR)ECO I_E = 100µA, I_F = 0
I_CEO V_CE = 10V, I_F = 0
C_J V_CE = 10V, f = 1MH_Z
30 – – V
70 – – V
7––V
– 5 50 nA
– 2 – pf
DC Current Transfer Ratio
CTR I_F = 10mA, V_CE = 10V
6–
Collector–Emitter Saturation Voltage V_CEO(sat) I_F = 60mA, I_C = 1.6mA
100 –
Isolation Resistance
R_(I–O) V_(I–O) = 500V_DC
100 –
Input to Output Capacitance
C_(I–O) V_(I–O) = 0, f = 1MH_Z
––
Switching Speeds
t_r, t_f V_CE = 10V, I_CE = 2mA
–5
R_L = 100Ω _{ICB = 50µA}
–
3
–%
–V
– GΩ
2 pf
– µs
– µs
Pin Connection Diagram
Anode 1
6 Base
Cathode 2
5 Collector
N.C. 3
4 Emitter
654
1 23
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.260
(6.6)
Max
.350
(8.89)
Max
.300 (7.62)
.085 (2.16) Max
.100 (2.54)