NTE3036 Datasheet, PDF (2/2 Pages) NTE Electronics – Phototransistor Silicon NPN Photo Darlington Light Detector

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Optical Characteristics
Light Current
Collector–Emitter Saturation Voltage
Photo Current Rise Time
Photo Current Fall Time
I_L
V_CE(sat)
t_r
t_f
V_CC = 5V, R_L = 10Ω, Note 1
I_L = 10mA, H = 2mW/cm² at 2870°K
R_L = 10Ω, I_L = 1mA Peak, Note 2
R_L = 10Ω, I_L = 1mA Peak, Note 2
12 20 – mA
– 0.6 1.0 V
– 15 100 µs
– 65 150 µs
Note 1. Radiation flux density (H) is equal to 0.5mW/cm² emitted from a tungsten source at a color
temperature of 2780°K.
Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium–
arsenide) light emitting diode (λ 0.9µm) with a pulse width equal to or greater than 500µs,
I_L = 1mA peak.
.228 (5.79) Max
.185 (4.69)
.177
(4.5)
.276
(7.01)
Max
Emitter
.500
(12.7)
Min
.018 (0.45) Dia Typ
.100 (2.54) Dia
Base
Collector/Case