NTE3029A Datasheet, PDF (2/2 Pages) NTE Electronics – Infrared-Emitting Diode

Optical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak Emission Wavelength
Spectral Half Power Wavelength
λ_P I_F = 50mA
Spectral Output Temperature Shift
Axial Power Output Intensity
Intensity Per Unit Solid Angle
Power Half–Angle
P_O I_F = 20mA, Note 4
E_e I_F = 20mA, Note 4
Ω
Rise Time and Fall Time
t_r, t_f
Min Typ Max Unit
930 940 950
nm
– 48 –
nm
– 0.3 –
nm/°C
50 150 – µW/ sq cm
0.2 0.65 – mW/Sr
– ±20 –
°
– 1.0 –
µs
Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under
test.
.125
(3.17)
.160 (4.06)
.045 (1.14) Dia
.120
(3.04)
.168
(4.27)
.750
(19.05)
Max
.020 (.508)
K
A
.103
(2.62)
.100 (2.54)
.060 (1.52)