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NTE2991 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N−Channel, Enhancement Mode High Speed Switch | |||
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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainâSource Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
âV(BR)DSS/ Reference to +25°C, ID = 1mA
âTJ
Static DrainâSource ON Resistance RDS(on) VGS = 10V, ID = 62A, Note 5
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
Forward Transconductance
gfs
VDS = 25V, ID = 62A, Note 5
DrainâtoâSource Leakage Current
IDSS VDS = 55V, VGS = 0
VDS = 44V, VGS = 0V, TC = +150°C
GateâSource Leakage Forward
IGSS VGS = 20V
GateâSource Leakage Reverse
IGSS VGS = â20V
Total Gate Charge
Qg
VGS = 10V, ID = 62A, VDS = 44V
GateâSource Charge
Qgs
GateâDrain (âMillerâ) Charge
Qgd
TurnâOn Delay Time
Rise Time
td(on)
tr
VDD = 28V, ID = 62A, RG = 4.5â¦,
VGS = 10V, Note 5
TurnâOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD
Between lead, 6mm (0.25â) from
LS
package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceâDrain Diode Ratings and Characteristics
55 â â V
â 0.057 â V/°C
â â 8.0 â¦
2.0 â 4.0 V
44 â â mhos
â â 25 µA
â â 250 µA
â â 100 nA
â â â100 nA
â â 146 nC
â â 35 nC
â â 54 nC
â 14 â ns
â 101 â ns
â 50 â ns
â 65 â ns
â 4.5 â nH
â 7.5 â nH
â 3247 â pF
â 781 â pF
â 211 â pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnâOn Time
IS
(Body Diode)
â â 110 A
ISM (Body Diode) Note 2
â â 390 A
VSD TJ = +25°C, IS = 62A, VGS = 0V, Note 5 â
â 1.3 V
trr
TJ = +25°C, IF = 62A, di/dt = 100A/µs, â 69 104 ns
Qrr
Note 5
â 143 215 µC
ton
Intrinsic turnâon time is neglegible
(turnâon is dominated by LS + LD)
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Width ⤠400µs, Duty Cycle ⤠2%.
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