NTE2981 Datasheet, PDF (2/3 Pages) NTE Electronics – Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250µA
Breakdown Voltage Temperature
Coefficient
∆V_(BR)DSS/ Reference to +25°C, I_D = 1mA
∆T_J
Static Drain–Source ON Resistance R_DS(on) V_GS = 5V, I_D = 4.6A, Note 5
V_GS = 4V, I_D = 3.9A, Note 4
Gate Threshold Voltage
V_GS(th) V_DS = V_GS, I_D = 250µA
Forward Transconductance
g_fs
V_DS = 50V, I_D = 4.6A, Note 5
Drain–to–Source Leakage Current
I_DSS V_DS = 100V, V_GS = 0
V_DS = 80V, V_GS = 0V, T_C = +125°C
Gate–Source Leakage Forward
I_GSS V_GS = 10V
Gate–Source Leakage Reverse
I_GSS V_GS = –10V
Total Gate Charge
Q_g
V_GS = 5V, I_D = 9.2A, V_DS = 80V, Note 5
Gate–Source Charge
Q_gs
Gate–Drain (“Miller”) Charge
Q_gd
Turn–On Delay Time
Rise Time
t_d(on)
t_r
V_DD = 50V_, I_D = 9.2A, R_G = 9.0Ω,
R_D = 5.2Ω, Note 5
Turn–Off Delay Time
t_d(off)
Fall Time
t_f
Internal Drain Inductance
Internal Source Inductance
L_D
Between lead, 6mm (0.25”) from
L_S
package and center of die contact
Input Capacitance
C_iss V_GS = 0V, V_DS = 25V, f = 1MHz
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Source–Drain Diode Ratings and Characteristics
100 –
– 0.13
–V
– V/°C
– – 0.27 Ω
– – 0.38 Ω
1.0 – 2.0 V
4.4 –
– mhos
– – 25 µA
– – 250 µA
– – 100 nA
– – –100 nA
– – 12 nC
– – 3.0 nC
– – 7.1 nC
– 9.8 – ns
– 64 – ns
– 21 – ns
– 27 – ns
– 4.5 – nH
– 7.5 – nH
– 490 – pF
– 150 – pF
– 30 – pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
I_S
(Body Diode)
– – 7.7 A
I_SM (Body Diode) Note 1
– – 31 A
V_SD T_J = +25°C, I_S = 7.7A, V_GS = 0V, Note 5 –
– 2.5 V
t_rr
T_J = +25°C, I_F = 9.2A, di/dt = 100A/µs, – 110 140 ns
Q_rr
Note 5
– 0.8 1.0 µC
t_on
Intrinsic turn–on time is neglegible
(turn–on is dominated by L_S + L_D)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.