NTE296 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon PNP Transistor General Purpose Amplifier

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
I_C = 1mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
I_C = 30mA, V_CE = 10V
I_C = 30mA, I_B = 3mA
I_C = 30mA, I_B = 3mA
25 –
–
30 –
–
30 –
–
–
– 0.75 V
–
– 0.9 V
Current Gain–Bandwidth Product
Collector–Base Capacitance
f_T
I_C = 10mA, V_CE = 20V, f = 10MHz 45 –
C_cb V_CB = 20V, I_E = 0, f = 1MHz
–
–
– MHz
8 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.56)
.180 (4.57)
C
.132 (3.35) Dia
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)