NTE2958 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics (Cont’d): (T_ch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
– 1380 – pF
– 150 – pF
– 32 – pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Diode Forward Voltage
t_d(on)
t_r
t_d(off)
t_f
V_SD
V_DD = 200V_, I_D = 5A, V_GS = 10V,
R_GEN = R_GS = 50Ω
I_S = 5A, V_GS = 0V
– 25 – ns
– 33 – ns
– 170 – ns
– 55 – ns
– 1.0 1.5 V
.114 (2.9)
.181 (4.6)
Max
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
.118
(3.0)
Max
.531
(13.5)
Min
GD S
.098 (2.5)
.100 (2.54)