NTE2946 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage BV_DSS V_GS = 0v, I_D = 250µA
500 – – V
Gate Threshold Voltage
V_GS(th) V_DS = V_GS, I_D = 250µA
2.0 – 4.0 V
Gate–Source Leakage Forward
I_GSS V_GS = 20V
– – 100 nA
Gate–Source Leakage Reverse
I_GSS V_GS = –20V
– – –100 nA
Zero Gate Voltage Drain Current
I_DSS V_DS = Max. Rating, V_GS = 0
– – 250 µA
V_DS = 0.8 Max. Rating, T_C = +125°C
– – 1000 µA
Static Drain–Source ON Resistance R_DS(on) V_GS = 10V, I_D = 4A, Note 4
– – 0.85 Ω
Forward Transconductance
g_fs V_DS ≥ 50V, I_D = 4A, Note 4
4.0 6.5 – mhos
Input Capacitance
C_iss V_GS = 0V, V_DS = 25V, f = 1MHz
– 1510 – pF
Output Capacitance
C_oss
– 154 – pF
Reverse Transfer Capacitance
C_rss
– 66 – pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
t_d(on) V_DD = 0.5 BV_DSS, I_D = 8A, Z_O = 9.1Ω,
– 14 21 ns
t_r
(MOSFET switching times are essentially
independent of operating temperature)
–
23 35
ns
t_d(off)
– 49 74 ns
Fall Time
t_f
– 20 30 ns
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Q_g V_GS = 10V, I_D = 8A, V_DS = 0.8 Max.
Q_gs
Rating, (Gate charge is essentially
independent of operating temperature)
Q_gd
– – 74 nC
– 9 – nC
– 27 – nC
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
I_S (Body Diode)
I_SM (Body Diode) Note 2
V_SD T_J = +25°C, I_S = 8A, V_GS = 0V, Note 4
t_rr T_J = +25°C, I_F = 8A, dI_F/dt = 100A/µs
–– 8 A
– – 32 A
–– 2 V
– 460 970 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.