NTE2941 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Source Leakage Forward
Gate–Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain–Source ON Resistance
Forward Transconductance
BV_DSS
V_GS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0V, I_D = 250µA
V_DS = V_GS, I_D = 250µA
V_GS = 20V
V_GS = –20V
V_DS = Max. Rating, V_GS = 0
V_DS = 0.8 Max. Rating, T_C = +150°C
V_GS = 10V, I_D = 25A, Note 4
V_DS ≥ 50V, I_D = 25A, Note 4
60 –
–
V
2.0 – 4.0 V
– – 100 nA
– – –100 nA
– – 250 µA
– – 1000 µA
– – 0.028 Ω
15 –
– mho
s
Input Capacitance
C_iss V_GS = 0V, V_DS = 25V, f = 1MHz
– 2450 – pF
Output Capacitance
C_oss
– 740 – pF
Reverse Transfer Capacitance
C_rss
– 360 – pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
t_d(on) V_DD = 0.5 BV_DSS, I_D = 50A, Z_O = 9.1Ω,
–
t_r
(MOSFET switching times are essentially
independent of operating temperature)
–
t_d(off)
–
– 32 ns
– 210 ns
– 75 ns
Fall Time
t_f
– – 130 ns
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Q_g V_GS = 10V, I_D = 50A, V_DS = 0.8 Max.
Q_gs
Rating, (Gate charge is essentially
independent of operating temperature)
Q_gd
– – 87 nC
– 26.6 – nC
– 30.6 – nC
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
I_S (Body Diode)
I_SM (Body Diode) Note 2
V_SD T_J = +25°C, I_S = 50A, V_GS = 0V, Note 4
t_rr T_J = +25°C, I_F = 50A, dI_F/dt = 100A/µs
– – 150 A
– – 200 A
– – 2.5 V
– – 250 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.