NTE2935 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250µA
Breakdown Voltage Temperature
Coefficient
∆V_(BR)DSS/ I_D = 250µA
∆T_J
Gate Threshold Voltage
V_GS(th) V_DS = 5V, I_D = 250µA
Gate–Source Leakage Forward
I_GSS V_GS = 30V
Gate–Source Leakage Reverse
I_GSS V_GS = –30V
Drain–to–Source Leakage Current
I_DSS V_DS = 500V
V_DS = 400V, T_C = +125°C
Static Drain–Source ON Resistance R_DS(on) V_GS = 10V, I_D = 3.1A, Note 4
Forward Transconductance
g_fs
V_DS = 50V, I_D = 3.1A, Note 4
Input Capacitance
C_iss V_GS = 0V, V_DS = 25V, f = 1MHz
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Turn–On Delay Time
Rise Time
t_d(on)
t_r
V_DD = 250V_, I_D = 8A, R_G = 9.1Ω,
Note 4, Note 5
Turn–Off Delay Time
t_d(off)
Fall Time
t_f
Total Gate Charge
Gate–Source Charge
Q_g
V_GS = 10V, I_D = 8A, V_DS = 400V,
Q_gs
Note 4, Note 5
Gate–Drain (“Miller”) Charge
Q_gd
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I_S
(Body Diode)
I_SM (Body Diode) Note 1
V_SD T_J = +25°C, I_S = 6.2A, V_GS = 0V, Note 4
t_rr
T_J = +25°C, I_F = 8A, di_F/dt = 100A/µs,
Q_rr
Note 4
Min Typ Max Unit
500 –
–
V
– 0.66 – V/°C
2.0 – 4.0 V
– – 100 nA
– – –100 nA
– – 10 µA
– – 100 µA
– – 0.85 Ω
– 5.73 – mhos
– 1190 1550 pF
– 150 175 pF
– 166 75 pF
– 18 45 ns
– 22 55 ns
– 83 175 ns
– 30 70 ns
– 57 74 nC
– 7.5 – nC
– 28.4 – nC
– – 6.2 A
– – 34 A
– – 1.4 V
– 370 – ns
– 3.9 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.