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NTE2934 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch | |||
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainâSource Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
âV(BR)DSS/ ID = 250µA
âTJ
Gate Threshold Voltage
VGS(th) VDS = 5V, ID = 250µA
GateâSource Leakage Forward
IGSS VGS = 30V
GateâSource Leakage Reverse
IGSS VGS = â30V
DrainâtoâSource Leakage Current
IDSS VDS = 400V
VDS = 320V, TC = +125°C
Static DrainâSource ON Resistance RDS(on) VGS = 10V, ID = 5.75A, Note 4
Forward Transconductance
gfs
VDS = 50V, ID = 5.75A, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
TurnâOn Delay Time
Rise Time
td(on)
tr
VDD = 200V, ID = 17A, RG = 6.2â¦,
Note 4, Note 5
TurnâOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
GateâSource Charge
Qg
VGS = 10V, ID = 17A, VDS = 320V,
Qgs
Note 4, Note 5
GateâDrain (âMillerâ) Charge
Qgd
SourceâDrain Diode Ratings and Characteristics
400 â
â
V
â 0.46 â V/°C
2.0 â 4.0 V
â â 100 nA
â â â100 nA
â â 10 µA
â â 100 µA
â â 0.3 â¦
â 9.75 â mhos
â 2140 2780 pF
â 305 350 pF
â 134 155 pF
â 20 50 ns
â 22 55 ns
â 100 210 ns
â 32 75 ns
â 101 131 nC
â 14 â nC
â 51.5 â nC
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
(Body Diode)
â â 11.5 A
ISM (Body Diode) Note 1
â â 68 A
VSD TJ = +25°C, IS = 11.5A, VGS = 0V, Note 4 â
â 1.5 V
trr
TJ = +25°C, IF = 17A, diF/dt = 100A/µs, â 385 â ns
Qrr
Note 4
â 4.85 â µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ⤠2%.
Note 5. Essentially independent of operating temperature.
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