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NTE291 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Medium Power Amp, Switch
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
ICEO
ICER
ICEX
VCE = 60V, IB = 0
RBE = 100Ω, VCE = 120V
RBE = 100Ω, VCE = 120V,
TC = +100°C
VCE = 120V, VBE = –1.5V
– – 1 mA
– – 0.1 mA
– – 2 mA
– – 0.1 mA
Emitter Cutoff Current
Collector–to–Emitter Sustaining
Voltage
VCE = 120V, VBE = –1.5V,
TC = +100°C
IEBO VBE = –5V, IC = 0
VCEO(sus) IC = 0.1A, IB = 0, Note 1
––
––
120 –
2 mA
1 mA
–V
Collector–to–Emitter Sustaining VCER(sus) RBE = 100Ω, IC = 0.1A, Note 2 130 –
–
V
Voltage
DC Forward Current
hFE VCE = 4V, IC = 1.5A, Note 1
VCE = 2.5V, IC = 4A, Note 1
15 – 150
2––
Base–to–Emitter Voltage
VBE VCE = 4V, IC = 1.5A, Note 1
––2V
Collector–to–Emitter Saturation
Voltage
VCE(sat)
VCE = 2.5V, IC = 4A, Note 1
IC = 1.5A, IB = 0.15A, Note 1
IC = 4A, IB = 2A, Note 1
– – 3.5 V
– – 1.2 V
– – 2.5 V
Small Signal Forward Current
Transfer Ratio
hfe VCE = 4V, IC = 0.5A, f = 50kHz 20 –
–
Gain Bandwidth Product
fT
VCE = 4V, IC = 0.5A
4 – – MHz
Small Signal Forward Current
Transfer Ratio
|hfe| VCE = 4V, IC = 0.5A, f = 50kHz 4
–
–
Collector–to–Base Capacitance
Cobo VCB = 10V, IC = 0, f = 1MHz
– – 250 pF
Note 1. Pulsed: Pulse Duration = 300µs, Duty Factor = 0.018.
Note 2. CAUTION: The sustaining voltage (VCER(sus)) MUST NOT be measured on a curve tracer.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500 (12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250
(6.35)
Max
.500 (12.7)
Min
Emitter
Collector/Tab