NTE2905 Datasheet, PDF (2/3 Pages) NTE Electronics – P−Ch, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain−to−Source On−Resistance
Gate Threshold Voltage
V_(BR)DSS
ΔV_(BR)DS
Δ^ST
R_DJS(on)
V_GS(th)
V_GS = 0V, I_D = 250μA
Reference to +25°C, I_D = 1mA
V_GS = 10V, I_D = −7.2A, Note 4
V_DS = V_GS, I_D = 250μA
−200 −
−
V
− -0.20 − V/°C
−
− 0.50 Ω
−2.0 − −4.0 V
Forward Transconductance
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
g_fs V_DS = 50V, I_D = 7.2A, Note 4
4.2 −
−
S
I_DSS V_DS = 200V, V_GS = 0V
−
− −100 μA
V_DS = 160V, V_GS = 0V, T_J = +125°C −
− −500 μA
I_GSS V_GS = −20V
− − −100 nA
Gate−to−Source Reverse Leakage
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
L_S
V_GS = 20V
−
I_D = −11A, V_DS = 160V, V_GS = 10V −
−
−
V_DD = 100V, I_D = 11A, R_G = 9.1Ω,
−
R_D = 8.6Ω, Note 4
−
−
−
Between lead, .250in. (6.0) mm from −
package and center of die contact
−
− 100 nA
− 44 nC
− 7.1 nC
− 27 nC
14 − ns
43 − ns
39 − ns
38 − ns
5.0 − nH
13 − nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
− 1200 − pF
− 370 − pF
− 81 − pF
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
I_S
I_SM Note 1
V_SD T_J = +25°C, I_S = 32A, V_GS = 0V,
Note 4
− − −12 A
− − −48 A
− − −5.0 V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn−On Time
t_rr T_J = +25°C, I_F = 32A,
Q_rr ^{di/dt = 100A/μs, Note 4}
− 250 300 ns
− 2.9 3.6 μC
t_on Intrinsic turn−on time is neglegible (turn−on is dominated by L_S+L_D)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ ≤00μs; duty cycle ≤ 2%.