NTE29 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Power, High Current Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
I_C = 25A, V_CE = 2V
I_C = 50A, V_CE = 5V
I_C = 25A, I_B = 2.5A
I_C = 50A, I_B = 10A
I_C = 25A, I_B = 2.5A
I_C = 25A, V_CE = 2V
15 – 60
5– –
–– 1 V
–– 5 V
–– 2 V
–– 2 V
Current Gain–Bandwidth Product
Output Capacitance
Small–Signal Current Gain
f_T I_C = 5A, V_CE = 10V, f = 1MHz 2 – – MHz
C_ob V_CB = 10V, I_E = 0, f = 0.1MHz – – 1200 pF
h_fe I_C = 10A, V_CE = 5V, f = 1kHz 15 – –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case