NTE274 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington Power Amplifier, Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
ON Characteristics
DC Current Gain
h_FE V_CE = 3V, I_C = 2A
750
V_CE = 3V, I_C = 4A
100
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 2A, I_B = 8mA
–
I_C = 4A, I_B = 40mA
–
Base–Emitter Saturation Voltage
V_BE(sat) I_C = 4A, I_B = 40mA
–
Base–Emitter ON Voltage
V_BE(on) V_CE = 3V, I_C = 2A
–
Dynamic Characteristics
Magnitude of Common Emitter
|h_fe| I_C = 1.5A, V_CE = 3V, f = 1MHz
4.0
Small–Signal Short–Circuit
Forward Current Transfer Ratio
Output Capacitance
NTE274
NTE275
C_ob
V_CB = 10V, I_E = 0, f = 0.1MHz
–
–
Small–Signal Current Gain
h_fe I_C = 1.5A, V_CE = 3V, f = 1kHz
300
Typ Max Unit
– 18000
–
–
– 2.0 V
– 3.0 V
– 4.0 V
– 2.8 V
–
–
– 120 pF
– 200 pF
–
–
NTE274
C
B
.485 (12.3)
.295 (7.5)
Dia
.062 (1.57)
E
NTE275
.031 (0.78) Dia
.360 (9.14)
Min
.960 (24.3)
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
C
.200
(5.08)
.145 (3.7) R Max
B
Collector/Case
Emitter
E