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NTE270 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington Power Amp, Switch | |||
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Electrical Characteristics (Contâd): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
hFE
CollectorâEmitter Saturation Voltage VCE(sat)
BaseâEmitter Saturation Voltage
VBE(sat)
Switching Characteristics (Resistive Load)
IC = 5A, VCE = 4V
IC = 10A, VCE = 4V
IC = 5A, IB = 10mA
IC = 10A, IB = 40mA
IC = 10A, IB = 40mA
1000 â â
500 â â
â â 2.0 V
â â 3.0 V
â â 3.5 V
Delay Time
Rise Time
Storage Time
Fall Time
td
VCC = 30V, IC = 5A,
â 0.15 â µs
tr
IB = 20mA, Duty Cycle ⤠2%,
IB1 = IB2, RC & RB Varied,
â
0.55
â
µs
ts
TJ = +25°C
â 2.5 â µs
tf
â 2.5 â µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2%.
NTE270
C
B
NTE271
C
B
E
E
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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