NTE27 Datasheet, PDF (2/2 Pages) NTE Electronics – Germanium PNP Transistor High Current, High Gain Amp

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small Signal Characteristics
h_FE
V_CE(sat)
V_BE(sat)
I_C = 15A, V_CE = 2V, Note 1
I_C = 60A, V_CE = 2V, Note 1
I_C = 15A, I_B = 1A, Note 1
I_C = 60A, I_B = 6A, Note 1
I_C = 15A, I_B = 1A, Note 1
I_C = 60A, I_B = 6A, Note 1
60 – 180
15 – –
– – 0.15 V
– – 0.3 V
– – 0.6 V
– – 1.0 V
Common–Emitter Cutoff Frequency
f_αe I_C = 15A, V_CE = 2V
2 – – kHz
Note 1. To avoid excessive heating of the collector junction, perform test with pulse method.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case