NTE2668 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Current Switching

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
I_CBO
I_EBO
hFE
fT
V_CB = 40V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 2V, I_C = 500mA
V_CE = 10V, I_C = 500mA
Output Capacitance
Cob V_CB = 10V, f = 1MHz
Collector-to-Emitter Saturation Voltage V_CE I_C = 3.5A, I_B = 175mA
I_C = 2A , I_B = 40mA
Base-to-Emitter Saturation Voltage
V_BE I_C = 2A , I_B = 40mA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
V_CBO
V_CES
V_CEO
V_EBO
t_on
t_stg
t_f
I_C = 10μA, I_E = 0
I_C = 100μA, R_BE = ∞
I_C = 1mA, R_BE = ∞
I_C = 10μA, I_C = 0
Pulse Width = 20μs, Duty Cycle ≤ 1%,
20I_B1 = -20I_B2 = I_C = 2.5A,
V_CC = 25V
Min Typ Max Unit
- - 0.1 μA
- - 0.1 μA
200 - 560
- ₃₃₀ - MHz
- ₂₈ - pF
- _{160 240} mV
- _{110 170} mV
- _{0.83 1.2} V
80 - - V
80 - - V
50 - - V
6--V
- 30 - ns
- 420 - ns
- 25 - ns
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
C
.275
(7.0)
BC E
.002 (0.5)
.295
(7.5)
.090 (2.3)
.002(0.5)