NTE2639 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch

Electrical Characteristics: (T_HS = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Isolation Limiting Value and Characteristic
Repetitive Peak Voltage from All Three
V_isol R.H. ≤ 65%; Clean and Dustfree
–
Terminals to External Heatsink
Capacitance from T2 to External
C_isol f = 1MHz
–
Heatsink
Static Characteristics
Collector Cutoff Current
I_CES V_CE = 1700V, V_BE = 0
–
V_CE = 1700V, V_BE = 0, T_J = +125°C –
Emitter Cutoff Current
I_EBO V_EB = 7.5V, I_C = 0A
–
Emitter–Base Breakdown Voltage
V_(BR)EBO I_B = 1mA
7.5
Collector–Emitter Sustaining Voltage V_CEO(sus) I_B = 0A, I_C = 100mA, L = 25mH
825
Collector–Emitter Saturation Voltage
V_CE(sat) I_C = 7A, I_B = 1.75A
–
Base–Emitter Saturation Voltage
V_BE(sat) I_C = 7A, I_B = 1.75A
–
DC Current Gain
h_FE V_CE = 5V, I_C = 0.1A
–
V_CE = 1V, I_C = 7A
4.0
Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit)
Turn–Off Storage Time
Turn–Off Fall Time
t_s
I_C(sat) = 7A, L_C = 650µH, C_fb = 18nF, –
t_f
V_CC = 162V, I_B(end) = 1.5A,
L_B = 2µH, –V_BB = 4V
–
Typ Max Unit
– 2500 V
22 – pF
– 1.0 mA
– 2.0 mA
– 1.0 mA
13.5 – V
–
–V
– 1.0 V
– 1.1 V
22 –
6.0 6.5
5.8 6.5 µs
0.6 0.8 µs
Note 2. Measured with half sine–wave voltage (curve tracer).
.630 (16.0) Max
.228 (5.8) Max
.118 (3.0)
.177
(4.5)
Isol
.885
(22.5)
Max
BCE
1.063
(27.0)
Max
.215 (5.45)
.712
(18.1)
Min
.215 (5.45)