NTE2598 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0
1100 –
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 10A, R_BE = ∞
800 –
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 1mA, I_C = 0
7–
Collector–Emitter Sustaining Voltage V_CEO(sus) I_C = 12A, I_B1 = –I_B2 = 2.4A, 800 –
l = 50µH, Clamped
–V
–V
–V
–V
Turn–On Time
Storage Time
Fall Time
t_on
V_CC = 400V,
t_stg
5I_B1 = –2.5I_B2 ^{= IC} = 20A,
R_L = 20Ω
t_f
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.236
(6.0)
.810(20.57)
Max
.137 (3.5)
Dia Max
.204 (5.2)
1.030
(26.16)
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023
(0.6)
BCE
Note: Collector connected to heat sink.