NTE2596 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 10mA, R_BE = ∞
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 1mA, I_C = 0
Collector–Emitter Sustaining Voltage V_CEX(sus) I_C = 15A, I_B1 = –I_B2 = 2A,
L = 100µH, Clamped
800 – – V
500 – – V
7––V
500 – – V
Turn–On Time
Storage Time
Fall Time
t_on V_CC = 200V,
t_stg
5I_B1 = –2.5I_B2 ^{= IC} = 26A,
R_L = 7.7Ω
t_f
– – 0.5 µs
– – 3.0 µs
– – 0.2 µs
.236
(6.0)
.810 (20.57)
Max
.137 (3.5)
Dia Max
.204 (5.2)
1.030
(26.16)
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023 (0.6)
BC E
Note: Collector connected to heat sink