English
Language : 

NTE2586 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch
◁
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base Emitter Saturation Voltage
VBE(sat) IC =1.5A, IB = 300mA
– – 1.5 V
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
1100 – – V
Collector Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞
800 – – V
Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
7––V
Collector Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = –IB2 = 300mA, 800 –
–
V
L = 2mH, Clamped
Turn–On Time
Storage Time
Fall Time
ton VCC = 400V, IC = 2A,
tstg
IB1 = 0.4A, IB2 = – 0.8A,
RL = 200Ω
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)