NTE2572 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
V_(BR)CBO I_C = 1mA, I_E = 0
V_(BR)CEO I_C = 1mA, R_BE = ∞
V_(BR)EBO I_E = 1mA, I_C = 0
t_on V_CC = 30V, V_BE = –5V,
t_stg
10I_B1 = –10I_B2 = I_C = 2A,
Pulse Width = 20µs,
t_f
Duty Cycle ≤ 1%
90 – – V
80 – – V
6––V
– 0.1 – µs
– 1.6 – µs
– 0.4 – µs
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)