NTE2566 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current, High Speed Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Turn–On Time
NTE2566
NTE2567
Storage Time
NTE2566
NTE2567
t_on I_C = 5A, I_B1 = 20A,
I_B2 = –20A, V_CC = 20V,
Pulse Width = 20µs,
Duty Cycle ≤ 1%
t_stg
µs
– 0.1 –
– 0.2 – µs
µs
– 1.2 –
– 0.4 – µs
Collector Current Fall Time
NTE2566
t_f
NTE2567
µs
– 0.05 –
– 0.1 – µs
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated