NTE2562 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Saturation Voltage
NTE2562
V_CE(sat) I_C = 5A, I_B = 0.25A
–
– 0.4 V
NTE2563
–
– 0.5 V
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
V_(BR)CBO I_C = 1mA, I_E = 0
V_(BR)CEO I_C = 1mA, R_BE = ∞
V_(BR)EBO I_E = 1mA, I_C = 0
60 –
–
V
30 –
–
V
6
–
–
V
Turn–On Time
NTE2562
NTE2563
Storage Time
NTE2562
NTE2563
t_on
V_CC = 10V, V_BE = –5V,
10I_B1 = –10I_B2 = I_C = 5A,
Pulse Width = 20µs,
Duty Cycle = 1%
t_stg
– 0.2 – µs
– 0.1 – µs
– 0.5 – µs
– 0.3 – µs
Fall Time
t_f
– 0.03 – µs
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated