NTE2539 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gain–Bandwidth Product
f_T V_CE = 10V, I_C = 3.2A
Output Capacitance
C_ob V_CB = 10V, f = 1MHz
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 10mA, R_BE = ∞
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 1mA, I_C = 0
Collector–Emitter Sustaining Voltage V_CEX(sus) I_C = 10A, I_B1 = 1A, I_B2 = –4A,
L = 200µH Clamped
– 20
– 300
500 –
400 –
7–
400 –
– MHz
– pF
–V
–V
–V
–V
Turn–On Time
Storage Time
Fall Time
t_on I_C = 20A, I_B1 = 4A, I_B2 = –8A,
–
– 0.5 µs
t_stg
R_L = 10Ω, V_CC = 200V
– – 2.5 µs
t_f
– – 0.3 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)