NTE2538 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gain–Bandwidth Product
f_T V_CE = 10V, I_C = 2A
– 20
Output Capacitance
C_ob V_CB = 10V, f = 1MHz
– 230
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0
500 –
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 10mA, R_BE = ∞
400 –
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 1mA, I_C = 0
7–
Collector–Emitter Sustaining Voltage V_CEX(sus) I_C = 8A, I_B1 = 0.8A, I_B2 = –3.2A, 400 –
L = 200µH Clamped
– MHz
– pF
–V
–V
–V
–V
Turn–On Time
Storage Time
Fall Time
t_on I_C = 12A, I_B1 = 2.4A,
t_stg
I_B2 = –4.8A, R_L = 10Ω,
V_CC = 200V
t_f
– – 0.5 µs
– – 2.5 µs
– – 0.3 µs
.123 (3.1)
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.315
(8.0)
.866
(22.0)
BCE
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)