NTE2534 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage
V_(BR)CBO I_C = 1mA, I_E = 0
90 – – V
Collector–Emitter Breakdown Voltage
V_(BR)CEO I_C = 1mA, R_BE = ∞
80 – – V
Emitter–Base Breakdown Voltage
Turn–On Time
Storage Time
NTE2534
NTE2535
V_(BR)EBO I_E = 1mA, I_C = 0
t_on V_CC = 50V,
10I_B1 = –10I_B2 = I_C = 5A,
t_stg
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
6 – –V
– 0.2 – µs
– 0.7 – µs
– 1.7 – µs
Fall Time
NTE2534
t_f
NTE2535
– 0.1 – µs
– 0.2 – µs
Note 1. For NTE2535, the polarity is reversed.
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
B
C/
E
Case
.215 (5.47)