NTE253 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington Power Amplifier

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
NTE253
NTE254
NTE253 & NTE253
Collector–Emitter Saturation Voltage
NTE253
NTE254
NTE253 & NTE254
Base–Emitter ON Voltage
NTE253
NTE254
NTE253 & NTE254
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(on)
V_CE = 3V, I_C = 1.5A
V_CE = 3V, I_C = 2A
V_CE = 3V, I_C = 4A
I_C = 1.5A, I_B = 30mA
I_C = 2.0A, I_B = 40mA
I_C = 4.0A, I_B = 40mA
V_CE = 3V, I_C = 1.5A
V_CE = 3V, I_C = 2.0A
V_CE = 3V, I_C = 4.0A
750 2000 –
750 2000 –
100 –
–
–
–
2.5
V
–
–
2.8
V
–
–
3.0
V
–
–
2.5
V
–
–
2.5
V
–
–
3.0
V
Small–Signal Current Gain
|h_fe| V_CE = 3V, I_C = 1.5A, f = 1MHz
1.0
–
–
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and
NTE254 (PNP).
NTE253
C
B
.450
(11.4)
Max
.330 (8.38)
Max
.175
(4.45)
Max
E
NTE254
C
B
E
.655
(16.6)
Max
EC B
.118 (3.0)
Dia
.030 (.762) Dia
.130 (3.3)
Max
.090 (2.28)