NTE2526 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Saturation Voltage
NTE2526
V_CE(sat)
I_C = 2A, I_B = 200mA
– 150 400 mV
NTE2527
– 200 500 mV
Base–Emitter Saturation Voltage
V_BE(sat) I_C = 2A, I_B = 200mA
– 0.9 1.2 V
Collector–Base Breakdown Voltage
V_(BR)CBO I_C = 10µA, I_E = 0
120 –
–V
Collector–Emitter Breakdown Voltage
V_(BR)CEO I_C = 1mA, R_BE = ∞
100 –
–V
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 10µA, I_C = 0
6
–
–V
Turn–On Time
Storage Time
NTE2526
t_on
V_CC = 50V, V_BE = –5V,
t_stg
10I_B1 = –10I_B2 = I_C =2A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
– 100 – ns
– 900 – ns
NTE2527
– 800 – ns
Fall Time
t_f
50
ns
Note 1. For NTE2527, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
.275
(7.0)
BCE
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)