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NTE2524 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current Switch
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Collector–Emitter Saturation Voltage
VCE(sat)
NTE2524
IC = 4A, IB = 200mA
–
NTE2525
–
Base–Emitter Saturation Voltage
VBE(sat) IC = 4A, IB = 200mA
–
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
60
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
50
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
6
Turn–On Time
Storage Time
NTE2524
NTE2525
ton VCC = 25V, VBE = –5V,
–
tstg
10IB1 = –10IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
–
–
Fall Time
tf
Typ
200
250
0.95
–
–
–
50
500
450
20
Max Unit
400 mV
500 mV
1.2 V
–V
–V
–V
– ns
– ns
– ns
ns
Note 1. For NTE2525, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
.275
(7.0)
BCE
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)