NTE2517 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2517
NTE2518
C_ob V_CB = 10V, f = 1MHz
– 10 – pF
– 25 – pF
Collector to Emitter Saturation Voltage
NTE2517
NTE2518
V_CE(sat) I_C = 1A, I_B = 50mA
– 110 300 mV
– 250 500 mV
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn–On Time
Storage Time
NTE2517
NTE2518
V_BE(sat)
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
t_on
t_stg
I_C = 1A, I_B = 50mA
I_C = 10µA, I_E = 0
I_C = 1mA, R_BE = ∞
I_E = 10µA, I_C = 0
I_C = 10A, I_B1 = 10A,
I_B2 = 1A
– 0.85 1.2 V
60 – – V
50 – – V
6––V
– 35 – ns
– 550 – ns
– 350 – ns
Fall Time
t_f
– 30 – ns
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.130
(3.3)
.610
(15.5)
.094 (2.4)