NTE2515 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2515
NTE2516
C_ob
V_CB = 10V, f = 1MHz
– 40 – pF
– 65 – pF
Collector Emitter Saturation Voltage
NTE2515
NTE2516
V_CE(sat)
I_C = 2A, I_B = 200mA
– 150 400 mV
– 200 500 mV
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Turn–On Time
Storage Time
NTE2515
NTE2516
V_BE(sat) I_C = 2A, I_B = 200mA
V_(BR)CBO I_C = 10µA, I_E = 0
V_(BR)CEO I_C = 1mA, R_BE = ∞
V_(BR)EBO I_E = 10µA, I_C = 0
t_on V_CC = 25V, V_BE = –5V,
t_stg
10I_B1 = –10I_B2 = I_C = 2A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
– 0.9 1.2 V
120 – – V
100 – – V
6––V
– 100 – ns
– 900 – ns
– 800 – ns
Fall Time
t_f
– 50 – ns
Note 1. For NTE2514, the polarity is reversed.
.315 (8.0)
.106 (2.7)
C
E
B
.433
(11.0)
.610
(15.5)
.094 (2.4)