NTE2510 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPNTransistor High Frequency Video Output

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
Reverse Transfer Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
C_ob
C_re
V_CE(sat)
V_BE(sat)
V_CB = 10V, f = 1MHz
V_CB = 10V, f = 1MHz
I_C = 300mA, I_B = 30mA
I_C = 300mA, I_B = 30mA
– 6.0 – pF
– 4.6 – pF
– 0.3 0.8 V
– 0.9 1.2 V
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.610
(15.5)
.130
(3.3)
.094 (2.4)