NTE247 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington Power Amplifier

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
V_CE = 3V, I_C = 6A
V_CE = 3V, I_C = 12A
I_C = 6A, I_B = 24mA
I_C = 12A, I_B = 120mA
I_C = 12A, I_B = 120mA
V_CE = 3V, I_C = 6A
750 – 18000
100 –
–
– – 2.0 V
– – 3.0 V
– – 4.0 V
– – 2.8 V
Small–Signal Current Gain
h_fe V_CE = 3V, I_C = 5A, f = 1kHz
Magnitude of Common Emitter
Small–Signal Short–Circuit
|h_fe| V_CE = 3V, I_C = 5A, f = 1MHz
Forward Current Transfer Ratio
300 –
4.0 –
–
– MHz
Output Capacitance
NTE247
NTE248
C_ob
V_CB = 10V, I_E = 0, f = 0.1MHz
pF
– – 300
– – 500 pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE247
C
.135 (3.45) Max
B
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
E
.312 (7.93) Min
.040 (1.02)
NTE248
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
C
B
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
E
Base
Collector/Case