NTE245 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington Power Amplifier

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
h_FE
V_CE(sat)
V_BE
V_CE = 3V, I_C = 5A
I_C = 5A, I_B = 20mA
I_C = 10A, I_B = 50mA
V_CE = 3V, I_C = 5A
1000 – –
– – 2.0 V
– – 4.0 V
– – 3.0 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE245
C
B
.135 (3.45) Max
.350 (8.89)
E
.875 (22.2)
Dia Max
Seating
Plane
NTE246
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
.430
C
(10.92)
B
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
E