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NTE2426 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington Switch
Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA
–
IC = 500mA, IB = 0.5mA, TJ = +150°C –
Base–Emitter Saturation Voltage
VBE(sat) IC = 500mA, IB = 0.5mA
–
Turn–On Time
ton IC = 500mA, IBon = –IBoff = 0.5mA
–
Turn–Off Time
toff
–
Typ
–
–
–
400
1500
Max
1.3
1.3
1.9
–
–
Unit
V
V
V
ns
ns
Schematic Diagram
NTE2426
NPN
C
B
NTE2427
PNP
C
B
E
E
.059 (1.5)
.174 (4.42)
.067 (1.7)
.015 (0.32)
E
C
B
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min