NTE241 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Audio Power Amplifier, Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(on)
I_C = 1.5A, V_CE = 2V
I_C = 4.0A, V_CE = 2V
I_C = 1.5A, I_B = 150mA
I_C = 4.0A, I_B = 1A
I_C = 1.5A, V_CE = 2V
20 – 80
7––
– – 0.6 V
– – 1.4 V
– – 1.2 V
Small–Signal Current Gain
Current–Gain Bandwidth Product
h_fe I_C = 100mA, V_CE = 2V, f = 1kHz
f_T
I_C = 1A, V_CE = 4V, f = 1MHz
25 –
2.5 –
–
– MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab