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NTE2396 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch | |||
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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainâtoâSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DrainâtoâSource OnâResistance
Gate Threshold Voltage
V(BR)DSS
âV(BR)DSS
âTJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 17A, Note 4
VDS = VGS, ID = 250µA
100 â
â
V
â 0.13 â V/°C
â â 0.077 â¦
2.0 â 4.0 V
Forward Transconductance
DrainâtoâSource Leakage Current
GateâtoâSource Forward Leakage
GateâtoâSource Reverse Leakage
gfs
VDS = 50V, ID = 17A, Note 4
5.8 â â mhos
IDSS VDS = 100V, VGS = 0V
â â 25 µA
VDS = 80V, VGS = 0V, TJ = +150°C â â 250 µA
IGSS VGS = 20V
â â 100 nA
IGSS VGS = â20V
â â â100 nA
Total Gate Charge
GateâtoâSource Charge
GateâtoâDrain (âMillerâ) Charge
TurnâOn Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
ID = 29A, VDS = 80V, VGS = 10V,
Note 4
VDD = 50V, ID = 29A, RG = 9.1â¦,
RD = 1.7â¦, Note 4
â â 69 nC
â â 13 nC
â â 37 nC
â 13 â ns
â 77 â ns
TurnâOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
â 40 â ns
tf
â 48 â ns
LD
Between lead, .250in. (6.0) mm from â 4.5 â nH
LS
package and center of die contact
â 7.5 â
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
â 1300 â pF
â 630 â pF
â 130 â pF
SourceâDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 1
VSD TJ = +25°C, IS = 28A, VGS = 0V,
Note 4
â â 28 A
â â 110 A
â â 2.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 29A,
Qrr di/dt = 100A/µs, Note 4
â 120 260 ns
â 0.52 1.2 µC
Forward TurnâOn Time
ton Intrinsic turnâon time is neglegible (turnâon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ⤠300µs; duty cycle ⤠2%.
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