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NTE2395 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch | |||
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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainâtoâSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DrainâtoâSource OnâResistance
Gate Threshold Voltage
V(BR)DSS
âV(BR)DSS
âTJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 31A, Note 5
VDS = VGS, ID = 250µA
60 â
â
V
â 0.060 â V/°C
â â 0.028 â¦
2.0 â 4.0 V
Forward Transconductance
DrainâtoâSource Leakage Current
GateâtoâSource Forward Leakage
GateâtoâSource Reverse Leakage
gfs
VDS = 25V, ID = 31A, Note 5
15 â
â mhos
IDSS VDS = 60V, VGS = 0V
â â 25 µA
VDS = 48V, VGS = 0V, TJ = +125°C
â
â 250 µA
IGSS VGS = 20V
â â 100 nA
IGSS VGS = â20V
â â â100 nA
Total Gate Charge
GateâtoâSource Charge
GateâtoâDrain (âMillerâ) Charge
TurnâOn Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
ID = 51A, VDS = 48V, VGS = 10V,
Note 5
VDD = 30V, ID = 51A, RG = 9.1â¦,
RD = 0.55â¦, Note 5
â â 67 nC
â â 18 nC
â â 25 nC
â 14 â ns
â 110 â ns
TurnâOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
â 45 â ns
tf
â 92 â ns
LD
Between lead, .250in. (6.0) mm from â 4.5 â
nH
LS
package and center of die contact
â 7.5
â
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
â 1900 â pF
â 920 â pF
â 170 â pF
SourceâDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS Note 1
ISM Note 2
VSD TJ = +25°C, IS = 51A, VGS = 0V,
Note 5
â â 50 A
â â 200 A
â â 2.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 51A,
Qrr di/dt = 100A/µs, Note 5
â 120 180 ns
â 0.53 0.80 µC
Forward TurnâOn Time
ton Intrinsic turnâon time is neglegible (turnâon is dominated by LS+LD)
Note 1. Current limited by the package, (Die Current = 51A).
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 5. Pulse width ⤠300µs; duty cycle ⤠2%.
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