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NTE2394 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch
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Thermal Data:
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69°C/W
Typical Thermal Resistance, Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30°C/W
Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Body Leakage Current
ON Characteristics (Note 3)
V(BR)DSS ID = 250µA, VGS = 0
IDSS VGS = 0, VDS = Max Rating
VGS = 0, VDS = 400V,
TC = +125°C
IGSS VDS = 0, VGS = ±20V
Gate Threshold Voltage
On–State Drain Current
Static Drain–Source On Resistance
Dynamic Characteristics
VGS(th)
ID(on)
RDS(on)
VDS = VGS, ID = 250µA
VDS > ID(on) x RDS(on) max,
VGS = 10V
VGS = 10V, ID = 7.9A
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Switching Characteristics
gfs
Ciss
Coss
Crss
VDS > ID(on) x RDS(on) max,
ID = 7.9A, Note 4
VDS = 25V, VGS = 0,
f = 1MHz
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
Source Drain Diode Characteristics
VDD = 210V, ID = 7.0A,
RI = 4.7Ω
VGS = 10V, ID = 13A,
VDS = 400V
Source–Drain Current
Source–Drain Current (Pulsed)
Forward ON Voltage
Reverse Recovery Time
Reverse Recovered Charge
ISD
ISDM
VSD
trr
Qrr
Note 3
ISD = 14A, VGS = 0
IDS = 14A, di/dt = 100A/µs,
TJ = +150°C
Min Typ Max Unit
500 –
–V
–
– 250 µA
–
– 1000 µA
–
– ±500 nA
2
–
14 –
4V
–A
–
– 0.4 Ω
9.3 –
– mho
–
– 3000 pf
–
– 600 pf
–
– 200 pf
–
– 35 ns
–
– 50 ns
–
– 150 ns
–
– 70 ns
–
– 120 nC
–
– 14 A
–
– 56 A
–
– 1.4 V
– 1300 – ns
– 7.4 – µC
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulsed: Pulse Duration = 300µs, Duty Cycle 1.5%
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