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NTE2390 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
ON Characteristics (Note 1)
V(BR)DSS
IDSS
IGSSF
IGSSR
ID = 0.25mA, VGS = 0
VGS = 0, VDS = Max Rating
VGS = 0, VDS = 48V, TJ = +125°C
VDS = 0, VGSF = 20V
VDS = 0, VGSR = 20V
Gate Threshold Voltage
Static Drain–Source On Resistance
VGS(th)
rDS(on)
VDS = VGS, ID = 1mA
VDS = VGS, ID = 1mA, TJ = +100°C
VGS = 10V, ID = 6A
Drain–Source ON–Voltage
VDS(on) VGS = 10V, ID = 12A
VGS = 10V, ID = 6A, TJ = 100°C
Forward Transconductance
Dynamic Characteristics
gfs VDS = 15V, ID = 6A
Input Capactiance
Output Capacitance
Ciss
Coss
VDS = 25V, VGS = 0,
f = 1MHz
Reverse Transfer Capactiance
Crss
Switching Characteristics (TJ = +100°C, Note 1)
Turn–On Time
Rise Time
td(on)
tr
VDD = 25V, ID = 0.5 Rated ID,
Rgen = 50Ω
Turn–Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Gate–Source Charge
Qg VDS = 48V, VGS = 10V,
Qgs
ID = Rated ID
Gate–Drain Charge
Qgd
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage
Forward Turn–On Time
Reverse Recovery Time
Internal Package Inductance
VSD IS = Rated ID, VGS = 0
ton
trr
Internal Drain Inductance
Ld Measured from the contact screw
on tab to center of die
Measured from the drain lead 0.25”
from package to center of die
Internal Source Inductance
Ls Measured from the source lead
0.25” from package to source bond
pad
Min Typ Max Unit
60
–
–
V
–
– 0.2 mA
–
– 1.0 mA
–
– 100 nA
–
– 100 nA
2.0 – 4.5 V
1.5 – 4.0 V
–
– 0.2 Ω
–
– 3.0 V
–
– 2.8 V
4
–
– mhos
–
– 400 pf
–
– 300 pf
–
– 100 pf
–
– 60 ns
–
– 160 ns
–
– 80 ns
–
– 110 ns
– 13 26 nC
–
6
– nC
–
7
– nC
– 1.8 3.2 V
Limited by stray inductance
– 300 –
ns
– 3.5 – nH
– 4.5 – nH
– 7.5 – nH
Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
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