NTE239 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Switch (SCS)

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
NPN Transistor
Collector Cutoff Current
I_CER V_CE = 70V, R_BE = 10kΩ
– 10 100 nA
Emitter Cutoff Current
DC Current Gain
PNP Transistor
I_EBO
h_FE
V_EB = 5V, I_C = 0
V_CE = 2V, I_C = 10mA
– 30 1000 nA
50 180 –
Emitter Cutoff Current
DC Current Gain
Combined Device
–I_EBO
h_FE
–V_EB = 70V, I_C = 0
V_CB = 0, I_E = 1mA
– 0.05 100 nA
0.72 – 2.5
Anode–Cathode Voltage
Holding Current
V_AK I_A = 50mA, I_C = 0, R_BE = 10kΩ – 1.05 1.4 V
I_H
R_BE = 10kΩ, I_C = 10mA, –V_BB 0.1 0.5 1.0 mA
= 2V
Turn–Off Time
t_off R_BE = 10kΩ
– 6 12 µs
.190
(4.82)
.500
(12.7)
Min
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.018 (0.45) Dia
2
1
3
45°
4
.040 (1.02)
4
Emitter (PNP)
2
Collector (PNP)/
Base (NPN)
3
Base (PNP)/
Collector (NPN)
Emitter (NPN)
1
Transistor Basing
2
Cathode/Gate
4
Anode
3
Anode/Gate
Cathode
1
Thyristor Basing