NTE2388 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V_(BR)DSS I_D = 250µA, V_GS = 0
200 – – V
Zero–Gate Voltage Drain Current
I_DSS V_GS = 0, V_DS = Max Rating
–
– 200 µA
V_GS = 0, V_DS = 160V,
T_C = +125°C
–
– 1000 µA
Gate–Body Leakage Current, Forward I_GSSF V_DS = 0, V_GSF = 20V
– – 100 nA
Gate–Body Leakage Current, Reverse I_GSSR V_DS = 0, V_GSR = 20V
– – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
Static Drain–Source On Resistance
On–State Drain Current
Forward Transconductance
Dynamic Characteristics
V_GS(th)
R_DS(on)
I_D(on)
g_fs
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 10A
V_GS = 10V, V_DS ≥ 3.2V
V_DS ≥ 3.2V, I_D = 10A
2–4V
–
– 0.18 Ω
18 – – A
6 – – mhos
Input Capactiance
Output Capacitance
C_iss
C_oss
V_DS = 25V, V_GS = 0,
f = 1MHz
Reverse Transfer Capactiance
C_rss
Switching Characteristics (Note 1)
– – 1600 pf
– – 750 pf
– – 300 pf
Turn–On Time
Rise Time
t_d(on)
t_r
V_DD [ 75V, I_D = 10A_PEAK,
R_g = 4.7Ω
Turn–Off Delay Time
t_d(off)
Fall Time
t_f
Total Gate Charge
Gate–Source Charge
Q_g V_DS = 160V, V_GS = 10V,
Q_gs ^{ID = Rated ID}
Gate–Drain Charge
Q_gd
Source Drain Diode Characteristics (Note 1)
– – 30 ns
– – 60 ns
– – 80 ns
– – 60 ns
– 38 60 nC
– 16 – nC
– 22 – nC
Forward ON Voltage
Forward Turn–On Time
Reverse Recovery Time
Internal Package Inductance
V_SD I_S = Rated I_D, V_GS = 0
t_on
t_rr
– 1.8 2.0 V
Limited by stray inductance
– 450 – ns
Internal Drain Inductance
L_d Measured from the contact – 3.5 – nH
screw on tab to center of die
Measured from the drain lead – 4.5 – nH
0.25” from package to center
of die
Internal Source Inductance
L_s Measured from the source – 7.5 – nH
lead 0.25” from package to
source bond pad
Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.